Semiconductor inspecting device

ABSTRACT

In a semiconductor inspecting device having a contact to be electrically connected to an electrode pad formed in a semiconductor device which is an object to be measured, and a substrate provided with the contact, the contact is provided obliquely to a main surface of the substrate.

TECHNICAL FIELD

The present disclosure relates to a semiconductor inspecting device forcausing a plurality of contacts to come in contact with electrode padsof a semiconductor device, thereby inspecting an electricalcharacteristic of the semiconductor device.

RELATED ART

In a process for inspecting a semiconductor device, there has beencarried out a probing inspection for directly pressing a tip of acontact (a probe) of a semiconductor inspecting device against anelectrode pad of the semiconductor device formed on a semiconductorwafer and thus connecting an external testing device to thesemiconductor device temporarily and electrically, therebydiscriminating quality of a conduction between respective circuits.There have been also carried out a burn-in inspection for giving athermal and electrical stress to a circuit at a high temperature,thereby selecting a defective acceleratingly, and an electricalcharacteristic inspection such as a final inspection for finallyperforming an inspection at a high frequency.

In recent years, referring to the semiconductor device, the number ofelectrode pads to be formed in the semiconductor device is increased(the number of pins is increased) with an enhancement in an integrationof a semiconductor element and an increase in the number of processingsignals, and furthermore, a reduction in a pitch of the electrode pad isadvanced. Consequently, it has been necessary to increase the number ofpins and to reduce a pitch also in a contact (probe) of a semiconductorinspecting device for inspecting an electrical characteristic of thesemiconductor device.

FIG. 1 is a sectional view illustrating a related-art semiconductorinspecting device 100. With reference to FIG. 1, the semiconductorinspecting device 100 has a support board 101, a relay board 102, aconnecting terminal 103, and a probe 104. A semiconductor device 108 hasan electrode pad 109. FIG. 2 is a perspective view illustrating theprobe 104 constituting the related-art semiconductor inspecting device100. In FIG. 2, the same components as those in FIG. 1 have the samereference numerals and description thereof will be omitted.

With reference to FIGS. 1 and 2, the relay board 102 is provided on alower surface of the support board 101 in the semiconductor inspectingdevice 100. A predetermined wiring (not shown) is formed on the supportboard 101 and the relay board 102, and the wiring (not shown) of therelay board 102 and an electrode pad 104 g of the probe 104 areelectrically connected to each other through the connecting terminal 103formed by a solder ball. The wiring (not shown) of the support board 101is electrically connected to an external testing device (not shown)through a cable (not shown).

The probe 104 has a probe forming board 104 a, a ground layer 104 b, aninsulating layer 104 c, and a wiring 104 d. The probe 104 also has aprotruded portion 104 e and a cantilever portion 104 f. In the probe104, the ground layer 104 b, the insulating layer 104 c and the wiring104 d are sequentially laminated on the probe forming board 104 a. Theprobe forming board 104 a is formed of silicon.

The cantilever portion 104 f which can easily be deformed is formed inthe probe 104, and the protruded portion 104 e is formed in a tip partof the cantilever portion 104 f and the vicinity thereof. The probeforming board 104 a is continuously provided with the wiring 104 dthrough the ground layer 104 b and the insulating layer 104 c from theprotruded portion 104 e to the electrode pad 104 g formed on a surfaceat an opposite side to a surface on which the protruded portion 104 e isformed, along the tip part of the cantilever portion 104 f.

The electrode pad 104 g is formed in a position in which a connection tothe connecting terminal 103 can be carried out, and the electrode pad104 g and the connecting terminal 103 are electrically connected to eachother. The semiconductor inspecting device 100 has a mechanism (notshown) which can be moved in a Z-Z direction. In an inspection of anelectrical characteristic of the semiconductor device 108, thesemiconductor inspecting device 100 is moved toward the semiconductordevice 108 side in the Z-Z direction, and the wiring 104 d in theprotruded portion 104 e of the semiconductor inspecting device 100 iselectrically connected to the electrode pad 109 of the semiconductordevice 108 which is an object to be measured.

In this case, the cantilever portion 104 f is deflected so that a springproperty is generated and the wiring 104 d in the protruded portion 104e can be pushed against the electrode pad 109 at a proper pressure.Thus, a stable and electrical connection can be implemented. A quantityof the deflection of the cantilever portion 104 f is approximately 10μm, for example.

In the semiconductor inspecting device 100, four probes are provided inan X-X direction. In the probe 104, moreover, four sets of protrudedportions 104 e and cantilever portions 104 f are provided in a Y-Ydirection. Accordingly, the protruded portions 104 e can besimultaneously and electrically connected to 16 electrode pads 109 inthe semiconductor device 108 which is the object to be measured.

By providing five or more probes 104 in the X-X direction in thesemiconductor inspecting device 100 or providing five or more sets ofprotruded portions 104 e and cantilever portions 104 f in the Y-Ydirection in the probe 104, it is also possible to increase the numberof the protruded portions 104 e which can be connected to the electrodepad 109 simultaneously and electrically (for example, see PatentDocument 1).

[Patent Document 1] JP-A-2001-91543 Publication

Although it is easy to increase the number of pins and to reduce a pitchin the Y-Y direction in FIG. 2 over the protruded portion 104 e of theprobe 104 in the related-art semiconductor inspecting device 100,however, there is employed a structure in which the wiring 104 d of theprotruded portion 104 e and the electrode pad 109 are electricallyconnected to each other at a pressure generated by the spring propertythrough the deflection of the cantilever portion 104 f. For this reason,there is a problem in that at least a predetermined length is requiredfor the cantilever portion 104 f and it is hard to increase the numberof the pins and to reduce the pitch in the X-X direction in FIG. 1 overthe protruded portion 104 e of the probe 104.

SUMMARY

Exemplary embodiments of the present invention provide a semiconductorinspecting device having a probe structure which can increase the numberof pins and to reduce a pitch in X-X and Y-Y directions.

A first aspect of the invention is directed to a semiconductorinspecting device comprising:

a contact to be electrically connected to an electrode pad formed in asemiconductor device which is an object to be measured; and

a substrate provided with the contact,

wherein the contact is provided obliquely to a main surface of thesubstrate.

A second aspect of the invention is directed to the semiconductorinspecting device according to the first aspect of the invention,wherein a plurality of contacts is provided in a matrix over the mainsurface of the substrate.

A third aspect of the invention is directed to the semiconductorinspecting device according to the second aspect of the invention,wherein the contacts corresponding to a single row or column are formedintegrally.

A fourth aspect of the invention is directed to the semiconductorinspecting device according to any of the first to third aspects of theinvention, wherein the contact has a substrate formed by a singlesilicon crystal, an insulating layer formed on the substrate, and awiring is formed on the insulating layer.

A fifth aspect of the invention is directed to the semiconductorinspecting device according to the fourth aspect of the invention,wherein the wiring is electrically connected, through wire bonding, to awiring formed on the main surface of the substrate.

A sixth aspect of the invention is directed to the semiconductorinspecting device according to any of the first to fifth aspects of theinvention, further comprising:

a contact positioning portion having a through hole.

A seventh aspect of the invention is directed to the semiconductorinspecting device according to the sixth aspect of the invention,wherein a plurality of contacts is provided in a matrix over the mainsurface of the substrate,

and wherein a plurality of through holes is provided in a matrix inorder to separate the respective contacts from each other.

An eighth aspect of the invention is directed to the semiconductorinspecting device according to the sixth aspect of the invention,wherein a plurality of contacts is provided in a matrix over the mainsurface of the substrate,

and wherein a plurality of through holes is formed like a slit in orderto separate the contacts corresponding to one row or column from eachother.

A ninth aspect of the invention is directed to the semiconductorinspecting device according to any of the sixth to eighth aspects of theinvention, wherein the contact positioning portion functions as astopper for preventing an interval between the substrate and thesemiconductor device from being smaller than a predetermined value.

A tenth aspect of the invention is directed to the semiconductorinspecting device according to any of the first to ninth aspects of theinvention, further comprising:

a resistor provided on at least one of the contact or the substrate.

According to the invention, it is possible to provide a semiconductorinspecting device having a probe structure which can increase the numberof pins and to reduce a pitch in X-X and Y-Y directions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view illustrating a related-art semiconductorinspecting device 100,

FIG. 2 is a perspective view illustrating a probe 104 constituting therelated-art semiconductor inspecting device 100,

FIG. 3 is a front view illustrating a semiconductor inspecting device 10according to a first embodiment of the invention,

FIG. 4 is a left side view illustrating the semiconductor inspectingdevice 10 according to the first embodiment of the invention,

FIG. 5 is a bottom view illustrating an array of a probe 40 in thesemiconductor inspecting device 10 according to the first embodiment ofthe invention,

FIG. 6 is a sectional view illustrating the semiconductor inspectingdevice 10 according to the first embodiment of the invention,

FIG. 7 is a view (No. 1) showing a process for manufacturing the probe40 according to the first embodiment of the invention,

FIG. 8 is a view (No. 2) showing the process for manufacturing the probe40 according to the first embodiment of the invention,

FIG. 9 is a view (No. 3) showing the process for manufacturing the probe40 according to the first embodiment of the invention,

FIG. 10 is a view (No. 4) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 11 is a view (No. 5) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 12 is a view (No. 6) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 13 is a view (No. 7) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 14 is a view (No. 8) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 15 is a view (No. 9) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 16 is a view (No. 10) showing the process for manufacturing theprobe 40 according to the first embodiment of the invention,

FIG. 17 is a left side view illustrating a semiconductor inspectingdevice 70 according to a second embodiment of the invention,

FIG. 18 is a sectional view illustrating a semiconductor inspectingdevice 80 according to a third embodiment of the invention,

FIGS. 19A and 19B are bottom views illustrating only a probe 40 and aprobe positioning portion 85 in the semiconductor inspecting device 80,and

FIG. 20 is a sectional view illustrating a semiconductor inspectingdevice 90 according to a fourth embodiment of the invention.

DETAILED DESCRIPTION

Next, an embodiment according to the invention will be described withreference to the drawings.

First Embodiment

FIG. 3 is a front view illustrating a semiconductor inspecting device 10according to a first embodiment of the invention. FIG. 4 is a left sideview illustrating the semiconductor inspecting device 10 according tothe first embodiment of the invention. FIG. 5 is a bottom viewillustrating an array of a probe 40 in the semiconductor inspectingdevice 10 according to the first embodiment of the invention. FIG. 6 isa sectional view illustrating the semiconductor inspecting device 10according to the first embodiment of the invention.

With reference to FIGS. 3 to 6, the semiconductor inspecting device 10has a support board 20, a relay board 30, a probe 40, a bonding wire 50,a spacer 51, a sealing portion 52, and a connecting cable 53. Asemiconductor device 58 has an electrode pad 59.

The relay board 30 is provided on a lower surface of the support board20, and 16 probes 40 are provided on a lower surface of the relay board30. The semiconductor inspecting device 10 has a mechanism (not shown)which can be moved in a Z-Z direction. In the case in which thesemiconductor inspecting device 10 is moved toward the semiconductordevice 58 side in the Z-Z direction, the probe 40 of the semiconductorinspecting device 10 comes in contact with the electrode pad 59 of thesemiconductor device 58 and they are electrically connected to eachother.

The support board 20 has a mother board 21, an insulating layer 22,wirings 23 a and 23 b, and a through hole 24. The mother board 21 has alower surface 21 a and an upper surface 21 b. The mother board implies asubstrate on which neither an insulating layer nor a wiring are formed(the following is the same). The insulating layer 22 is formed on themother board 21. As a material of the mother board 21, for example, itis possible to use silicon or ceramic. As a material of the insulatinglayer 21, for example, it is possible to use SiO₂.

The wiring 23 a is formed on the lower surface 21 a of the mother board21 through the insulating layer 22. The wiring 23 b is formed on theupper surface 21 b of the mother board 21 through the insulating layer22. The wirings 23 a and 23 b are electrically connected to each othervia the through hole 24. As materials of the wirings 23 a and 23 b, forexample, it is possible to use Cu or Al.

The relay board 30 has a mother board 31, an insulating layer 32 and awiring 33. The mother board 31 has a lower surface 31 a. The insulatinglayer 32 is formed on the mother board 31. As a material of the motherboard 31, for example, it is possible to use silicon or ceramic. As amaterial of the insulating layer 32, for example, it is possible to useSiO₂. The wiring 33 is formed on the lower surface 31 a of the motherboard 31 through the insulating layer 32. As a material of the wiring33, for example, it is possible to use Cu or Al.

The probe 40 is a contact which has a mother board 41, an insulatinglayer 42 and a wiring 43 and is electrically connected to the electrodepad 59 of the semiconductor device 58 which is an object to be measured.The mother board 41 has a lower surface 41 a and a side surface 41 b.The insulating layer 42 is formed on the mother board 41. For a materialof the mother board 41, a single silicon crystal is used. By using thesingle silicon crystal, it is possible to form the probe 40 in whichvarious characteristics such as a spring constant are uniform.

As a material of the insulating layer 42, for example, it is possible touse SiO₂. The wiring 43 is formed on the lower surface 41 a and the sidesurface 41 b in the mother board 41 through the insulating layer 42. Asa material of the wiring 43, for example, it is possible to use Cu orAl.

The probe 40 is disposed in a matrix having four rows and four columnsin X-X and Y-Y directions as shown in FIG. 5 seen from a bottom face and16 probes 40 in total are provided obliquely to the lower surface to bea main surface of the relay board 30. The matrix implies a state ofvertically and horizontally regular order which does not need to bestraight. An angle θ1 formed by the probe 40 and a lower surface of therelay board 30 can be set to be 30 to 60 degrees, for example. Theadjacent probes 40 are separated from each other through the spacer 51.As a material of the spacer 51, for example, it is possible to usesilicon or glass.

The relay board 30, the bonding wire 50, the spacer 51 and a portion ofthe probe 40 which is close to the lower surface of the relay board 30are sealed with the sealing portion 52. The probe 40 is providedobliquely to the lower surface to be the main surface of the relay board30 for the following reason. When the wiring 43 corresponding to thelower surface 41 a of the mother board 41 in the probe 40 comes incontact with the electrode pad 59 of the semiconductor device 58 whichis the object to be measured, the probe 40 is deflected so that a springproperty is generated and the wiring 43 corresponding to the lowersurface 41 a of the mother board 41 in the probe 40 is pushed at aproper pressure against the electrode pad 59 of the semiconductor device58 which is the object to be measured, resulting in an implementation ina stable and electrical connection. A quantity of the deflection of theprobe 40 is approximately 10 μm, for example.

In an inspection of an electrical characteristic of the semiconductordevice 58, the semiconductor inspecting device 10 is moved toward thesemiconductor device 58 side in the Z-Z direction, and the wiring 43corresponding to the lower surface 41 a of the mother board 41 in theprobe 40 of the semiconductor inspecting device 10 comes in contact withthe electrode pad 59 of the semiconductor device 58 which is the objectto be measured and is electrically connected to the electrode pad 59. Ashape of a portion in the probe 40 which comes in contact with theelectrode pad 59 of the semiconductor device 58 to be the measuredobject is not restricted to the shape shown in FIG. 3 but may be a tapershape or a shape obtained by rounding a corner portion of the tapershape.

The wirings 23 a, 33 and 43 are electrically connected through thebonding wire 50. Moreover, the connecting cable 53 connects the wiring23 b to an external testing device (not shown). Thus, the wiring 43corresponding to the lower surface 41 a of the mother board 41 in theprobe 40 is caused to come in contact with the electrode pad 59 of thesemiconductor device 58 to be the measured object at a proper pressure.Consequently, the electrode pad 59 of the semiconductor device 58 iselectrically connected to the external testing device (not shown) viathe wiring 43, the wiring 33, the wiring 23 a, the wiring 23 b, thebonding wire 50 and the connecting cable 53, Thus, it is possible toinspect an electrical characteristic of the semiconductor device 58.

As described above, in the related-art semiconductor inspecting device100, the probe 104 is provided with the cantilever portion 104 f whichcan easily be deformed, and the protruded portion 104 e is formed in thetip part of the cantilever portion 104 f or the vicinity thereof. Whenthe wiring 104 d in the protruded portion 104 e is electricallyconnected to the electrode pad 109 of the semiconductor device 108 whichis the object to be measured, the cantilever portion 104 f is deflexedso that the spring property is generated and the wiring 104 d in theprotruded portion 104 e can be pushed against the electrode pad 109 at aproper pressure, resulting in an implementation of a stable andelectrical connection.

In the semiconductor inspecting device 10 according to the firstembodiment of the invention, the cantilever portion 104 f is notprovided but the probe 40 is provided obliquely to the lower surface ofthe relay board 30 to generate the spring property in the probe 40.Thus, an interval L1 in the x-x direction of the probe 40 providedadjacently to the lower surface of the relay board 30 can be reducedconsiderably as compared with the related-art semiconductor inspectingdevice 100. Moreover, a portion corresponding to the cantilever portion104 f is not provided in the Y-Y direction. Therefore, an interval L2 inthe Y-Y direction of the probe 40 provided adjacently to the lowersurface of the relay board 30 can also be set to be almost equal to L1.For example, L1 and L2 are approximately 30 μm. It is possible toimplement an increase in the number of pitches and a reduction in apitch which correspond to a full matrix having more than severalthousand pins.

Next, description will be given to a method of manufacturing the probe40 according to the first embodiment of the invention. FIGS. 7 to 16 areviews showing a process for manufacturing the probe 40 according to thefirst embodiment of the invention. In FIGS. 7 to 16, the same componentsas those in FIGS. 3 to 6 have the same reference numerals anddescription thereof will be omitted. FIGS. 7 to 16 show an example ofthe case in which two probes 40 are manufactured.

First of all, at a step shown in FIG. 7, a silicon substrate 60 isprepared. The silicon substrate 60 is formed by a single siliconcrystal. A thickness T1 of the silicon substrate 60 is 625 μm in case ofφ6 inches and is 725 μm in case of φ8 inches, for example. At a stepshown in FIG. 8, subsequently, a V groove portion 61 is formed on analmost center in a longitudinal direction of the silicon substrate 60.The V groove portion 61 can be formed by dicing or chemical etching, forexample. An angle θ2 of the V groove portion 61 can be set to be 60 to120 degrees, for example.

At a step shown in FIG. 9, then, a square groove portion 62 is formed inthe longitudinal direction of the silicon substrate 60. The squaregroove portion 62 is formed in two positions which are symmetrical withrespect to the V groove portion 61. A width W1 of the square grooveportion 62 can be set to be 5 μm to 100 μm, for example. The squaregroove portion 62 can be formed by the Deep-RIE (Reactive Ion Etching)processing, for example. According to the Deep-RIE (Reactive IonEtching) processing, it is possible to carry out the processing withhigh precision of approximately ±1 μm.

At a step shown in FIG. 10, thereafter, the insulating layer 42 isformed on a surface of the silicon substrate 60. As a material of theinsulating layer 42, for example, it is possible to use SiO₂. Athickness T2 of the insulating layer 42 can be set to be 0.1 μm to 1.5μm, for example. At a step shown in FIG. 11, next, the wiring 43 isformed on the insulating layer 42. As a material of the wiring 43, forexample, it is possible to use Cu or Al. A thickness T3 of the wiring 43can be set to be 0.1 μm to 0.5 μm, for example. The wiring 43 can beformed by a subtractive method or a semiadditive method, for example.

At a step shown in FIG. 12, subsequently, the silicon substrate 60 isabraded or ground from a back side thereof to reduce a thickness of thesilicon substrate 60 so that two probes 40 are fabricated. In order toreduce the thickness of the silicon substrate 60, it is possible to usea back side grinder, for example. A thickness T4 of the siliconsubstrate 60 having the thickness reduced (a thickness of the probe 40)can be set to be 10 μm to 100 μm, for example.

At a step shown in FIG. 13, then, the spacer 51 is fixed between theadjacent probes 40. The probe 40 and the spacer 51 are fixed to eachother with an adhesive, for example. As a material of the spacer 51, forexample, it is possible to use silicon or glass. A thickness T5 of thespacer 51 can be set to be 150 μm, for example. At a step shown in FIG.14, thereafter, there is prepared the relay board 30 on which the wiring33 is formed through the insulating layer 32. The wiring 33 of the relayboard 30 and the wiring 43 of the probe 40 are electrically connected toeach other through the bonding wire 50.

At a step shown in FIG. 15, subsequently, the probe 40 is erected on therelay board 30 at the predetermined angle θ1. The angle θ1 formed by theprobe 40 and the relay board 30 can be set to be 30 to 60 degrees, forexample. At a step shown in FIG. 16, next, the portion of the probe 40which is close to the relay board 30 is sealed with the sealing portion52. As a material of the sealing portion 52, for example, it is possibleto use an epoxy resin. Thus, the probe 40 can be fabricated and can beprovided on the relay board 30.

According to the semiconductor inspecting device 10 in accordance withthe first embodiment of the invention, there is employed a probestructure in which the probe 40 is provided obliquely to the lowersurface of the relay board 30 to generate the spring property in theprobe 40, thereby connecting the probe 40 to the semiconductor device 58electrically. Consequently, it is possible to increase the number ofpins and to reduce a pitch in the X-X and Y-Y directions.

Second Embodiment

FIG. 17 is a left side view illustrating a semiconductor inspectingdevice 70 according to a second embodiment of the invention. Since planand sectional views illustrating the semiconductor inspecting device 70according to the second embodiment of the invention and a bottom viewillustrating an array of a probe 75 in the semiconductor inspectingdevice 70 according to the second embodiment of the invention areidentical to FIGS. 3, 5 and 6 illustrating the semiconductor inspectingdevice 10 according to the first embodiment of the invention, thedrawings and description will be omitted.

With reference to FIG. 17, the semiconductor inspecting device 70according to the second embodiment of the invention has the samestructure as the semiconductor inspecting device 10 except that theprobe 75 is provided on a relay board 30 in place of the probe 40 in thesemiconductor inspecting device 10 according to the first embodiment anda spacer 51 is not provided between the adjacent probes 75 in a Y-Ydirection.

The probe 75 shown in FIG. 17 is formed integrally corresponding to asingle column in the Y-Y direction and a wiring 77 is formed on aninsulating layer 76. The wiring 77 of the probe 75 and a wiring 33 ofthe relay board 30 are electrically connected to each other through abonding wire 50. The probe 75 is formed integrally corresponding to asingle column in the Y-Y direction so that the spacer 51 does not needto be provided between the adjacent probes 75 in the Y-Y direction. Amethod of manufacturing the probe 75 is executed in accordance with themethod of manufacturing the probe 40 shown in FIGS. 7 to 16. By theDeep-RIE (Reactive Ion Etching) processing, for example, it is possibleto form a portion in which a single column in the Y-Y direction of theprobe 75 is provided integrally.

According to the semiconductor inspecting device 70 in accordance withthe second embodiment of the invention, there is employed a probestructure in which the probe 75 is provided obliquely to a lower surfaceof the relay board 30 to generate a spring property in the probe 75 andthe probe 75 and a semiconductor device 58 are electrically connected toeach other. In the same manner as in the semiconductor inspecting device10 according to the first embodiment of the invention, consequently, itis possible to increase the number of pins and to reduce a pitch in X-Xand Y-Y directions.

Third Embodiment

FIG. 18 is a sectional view illustrating a semiconductor inspectingdevice 80 according to a third embodiment of the invention. Withreference to FIG. 18, the semiconductor inspecting device 80 accordingto the third embodiment of the invention has the same structure as thesemiconductor inspecting device 10 according to the first embodimentexcept that a probe positioning portion 85 is additionally provided onthe lower surface of the relay board 30 in the semiconductor inspectingdevice 10. FIG. 19 is a bottom view illustrating only a probe 40 and theprobe positioning portion 85 in the semiconductor inspecting device 80.

With reference to FIG. 19, a through hole 85 a or 85 b for inserting theprobe 40 therein is formed at a regular interval in the probepositioning portion 85. The probe positioning portion 85 may be providedwith 16 through holes 85 a in a matrix in order to separate 16 probes 40respectively in a correspondence of a single hole to the single probe 40as shown in FIG. 19A or may be provided with four through holes 85 blike a slit in order to separate the probes 40 in four columnsrespectively in a correspondence of a single hole to the probes 40 for asingle column as shown in FIG. 19B.

By providing the probe positioning portion 85 on the lower surface ofthe relay board 30, it is possible to align tip parts of the probes 40,thereby maintaining a certain pitch (interval). Moreover, the probepositioning portion 85 also serves as a stopper to be stopped in apredetermined position when the semiconductor inspecting device 80 ismoved toward a semiconductor device 58 side in a Z-Z direction. Morespecifically, by providing the probe positioning portion 85 on the lowersurface of the relay board 30, it is possible to prevent an intervalbetween the relay board 30 and the semiconductor device 58 from beingsmaller than a predetermined value. Therefore, it is possible to preventthe probe 40 from being broken due to excessive push-in.

According to the semiconductor inspecting device 80 in accordance withthe third embodiment of the invention, there is employed a probestructure in which the probe 40 is provided obliquely to the lowersurface of the relay board 30 to generate a spring property in the probe40 and the probe 40 and the semiconductor device 58 are electricallyconnected to each other. In the same manner as in the semiconductorinspecting device 10 according to the first embodiment of the invention,consequently, it is possible to increase the number of pins and toreduce a pitch in X-X and Y-Y directions.

By providing the probe positioning portion 85 on the lower surface ofthe relay board 30, furthermore, it is possible to maintain the tip partof the probe 40 to have a certain pitch. In addition, by the provisionof the probe positioning portion 85 on the lower surface of the relayboard 30, the probe positioning portion 85 serves as the stopper to bestopped in the predetermined position when the semiconductor inspectingdevice 80 is moved toward the semiconductor device 58 side in the Z-Zdirection. Therefore, it is possible to prevent the probe 40 from beingbroken due to the excessive push-in.

Fourth Embodiment

FIG. 20 is a sectional view illustrating a semiconductor inspectingdevice 90 according to a fourth embodiment of the invention. Withreference to FIG. 20, the semiconductor inspecting device 90 accordingto the fourth embodiment of the invention has the same structure as thesemiconductor inspecting device 10 except that a probe 95 is formed inplace of the probe 40 in the semiconductor inspecting device 10according to the first embodiment.

In the probe 95, an insulating layer 96 is formed on a side surface atan opposite side to a side surface on which a wiring 43 is formed, and aresistor 97 is further formed on the insulating layer 96. As a materialof the insulating layer 96, for example, it is possible to use SiO₂. Asthe resistor 97, for example, it is possible to use W (tungsten).

The resistor 97 is electrically connected to a wiring 33 of a relayboard 30 through a bonding wire (not shown), and furthermore, iselectrically connected to an external testing device (not shown) via abonding wire 50 (not shown), a wiring 23 a and a wiring 23 b in asupport board 20, and a connecting cable 53 (not shown). The resistor 97functions as a heater (a heating unit) for heating the probe 95. Morespecifically, a predetermined current is caused to flow to the resistor97 from the external testing device (not shown) so that heat isgenerated from the resistor 97 and is transferred to the probe 95. Thus,the probe 95 is brought to have a predetermined temperature.

The heat transferred to the probe 95 is further transferred through anelectrode pad 59 to a semiconductor device 58 which is an object to bemeasured. Consequently, it is possible to cause the temperature of theprobe 95 and that of the semiconductor device 58 including the electrodepad 59 to be a predetermined equal temperature. Thus, it is possible toprevent a positional shift of the probe 95 and the electrode pad 59 ofthe semiconductor device 58 due to an inequality of the temperature ofthe probe 95 and that of the semiconductor device 58 including theelectrode pad 59. In place of the resistor 97 functioning as the heater(the heating unit) for heating the probe 95 or in addition to theresistor 97, it is also possible to provide the heater (the heatingunit) on the relay board 30.

A method of manufacturing the probe 95 is executed in accordance withthe method of manufacturing the probe 40 shown in FIGS. 7 to 16. In caseof the probe 95, however, there are further required a step of formingthe insulating layer 96, a step of forming the resistor 97 on theinsulating layer 96, and a step of electrically connecting the resistor97 and the wiring 33 through the bonding wire 50.

According to the semiconductor inspecting device 90 in accordance withthe fourth embodiment of the invention, there is employed a probestructure in which the probe 95 is provided obliquely to a lower surfaceof the relay board 30 to generate a spring property in the probe 95 andthe probe 95 and the semiconductor device 58 are electrically connectedto each other. In the same manner as in the semiconductor inspectingdevice 10 according to the first embodiment of the invention,consequently, it is possible to increase the number of pins and toreduce a pitch in X-X and Y-Y directions.

Moreover, the resistor 97 functioning as the heater (the heating unit)and formed of W (tungsten), for example, is provided in the probe 95,and a current is caused to flow to the resistor 97, thereby generating aheat to set the temperature of the probe 95 and that of thesemiconductor device 58 including the electrode pad 59 to be equal toeach other. Thus, it is possible to prevent the positional shift of theprobe 95 from the electrode pad 59 of the semiconductor device 58 due tothe inequality of the temperature of the probe 95 and that of thesemiconductor device 58 including the electrode pad 59.

Although the preferred embodiments according to the invention have beendescribed above in detail, the invention is not restricted to theembodiments but various modifications and changes can be made to theembodiments without departing from the scope of the invention.

For example, it is also possible to provide at least 17 probes 40, 75 or95 on the lower surface of the relay board 30 in the semiconductorinspecting device 10 according to the first embodiment of the invention,the semiconductor inspecting device 70 according to the secondembodiment of the invention, the semiconductor inspecting device 80according to the third embodiment of the invention or the semiconductorinspecting device 90 according to the fourth embodiment of theinvention.

Moreover, it is also possible to employ a structure in which the probepositioning portion 85 is provided on the lower surface of the relayboard 30 in the semiconductor inspecting device 70 according to thesecond embodiment of the invention or the semiconductor inspectingdevice 90 according to the fourth embodiment of the invention.

In each of the embodiments according to the invention, furthermore, itis also possible to employ a structure in which the support board 20 andthe relay board 30 are formed to be a single board and the probe 40, 75or 95 may be provided on a main surface thereof.

What is claimed is:
 1. A semiconductor inspecting device comprising: asupport board; a relay board mounted to the support board; a pluralityof contacts mounted to the relay board, the contacts to be electricallyconnected to electrode pads formed in a semiconductor device which is anobject to be measured; and a contact positioning portion having athrough hole and functioning as a stopper for preventing an intervalbetween the substrate and the semiconductor device from being smallerthan a predetermined value, wherein the contacts are provided obliquelyto a main surface of the relay board and cantilevered from the mainsurface of the relay board, wherein the contacts are provided in amatrix over the main surface of the relay board, wherein the contactscorresponding to a single row or column are formed integrally, whereinthe contacts have a substrate formed by a single silicon crystal, aninsulating layer formed on the substrate, and a wiring formed on theinsulating layer, the wiring being electrically connected through wirebonding to a wiring formed on the main surface of the relay board, andwherein adjacent contacts are separated from each other by a spacerprovided between the contacts.
 2. The semiconductor inspecting deviceaccording to claim 1, wherein a plurality of through holes is providedin a matrix in order to separate the respective contacts from eachother.
 3. The semiconductor inspecting device according to claim 1,wherein a plurality of through holes is formed like a slit in order toseparate the contacts corresponding to one row or column from eachother.
 4. The semiconductor inspecting device according to claim 1,further comprising: a resistor provided on at least one of the contactsor the relay board, the resistor being a heater configured to heat thecontact.
 5. The semiconductor inspecting device according to claim 1,wherein an angle formed by the contacts and the main surface of therelay hoard is set to be 30 to 60 degrees.